Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy
نویسندگان
چکیده
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains challenge grow stoichiometric films by molecular beam epitaxy (MBE) observe pure order magnetometry. We report on detailed study of grown Si(1 1 1) MBE elemental sources. Films about 100 nm thickness are analyzed in stoichiometric, structural, magnetotransport properties high accuracy. High-quality nearly perfect septuple-layer structure realized structural defects typical for epitaxial van-der-Waals layers analyzed. The reveal Néel temperature 19 K, spin-flop transition at field 2.5 T resistivity 1.6 mΩ·cm. These values comparable that bulk crystals. Our results provide an important basis realizing identifying single-phase MBE.
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2022
ISSN: ['1873-5002', '0022-0248']
DOI: https://doi.org/10.1016/j.jcrysgro.2022.126677